Laser Micromachining Technology for AlGaN/GaN HEMTs and Schottky barrier diodes

Recent study “Laser Processing of Transparent Wafers with a AlGaN/GaN Heterostructures and High-Electron Mobility Devices on a Backside” was published by S. Indrašiūnas et al. in “Micromachines” Journal from MDPI publisher. In the thorough study laser ablation process was optimized and used to dice transparent wafers with AlGaN/GaN heterostructures with various electronic devices. The work was supported from the Research Council of Lithuania (Lietuvos mokslo taryba) through the “T-HP” Project (Grant No. DOTSUT-184) funded by the European Regional Development Fund according to the supported activity “Research Projects Implemented by World-class Researcher Groups” under the Measure No. 01.2.2-LMT-K-718-03-0096. The work can be reached through DOI: