How Lithuanian semiconductor creators impressed colleagues from Taiwan

EN: In the “Curiosity Gene” episode the significance and future of semiconductor technologies in Lithuania in the new light of Taiwan transfer of transistor manufacture secrets to Lithuania is presented. The head of FTMC prof. Gintaras Valušis and senior research fellow dr. Linas Minkevičius talks straight from THz Photonics Lab of FTMC. The episode in Lithuanian language can be accessed through this link to the archives of national broadcaster LRT.

LT: “Smalsumo genas” laidoje pasakojama apie puslaidininkinių technologijų svarbą ir perspektyvas Lietuvoje, Taivanui perleidžiant tranzistorių gamybos paslaptis. Laidoje iš Terahercų fotonikos laboratorijos kalba FTMC direktorius prof. Gintaras Valušis ir mokslininkas dr. Linas Minkevičius. Laidos įrašą kviečiame pažiūrėti paspaudus šią nuorodą į LRT mediateką.

European patent is published by EPO

European Patent Office (EPO) just published the patent for the method for fabrication of recessed electrical elements (EP 3 975 224) by inventors Irmantas Kašalynas (head of our lab), Simonas Indrašiūnas, Pawel Prystawko, and Piotr Kruszewski. Two later inventors are our collaborators from Institute of High Pressure Physics at Polish
Academy of Sciences, Poland.

New paper about structured THz radiation: Imaging with Airy beam

New paper by Rusnė Ivaškevičiūtė-Povilauskienė et. al just published in Light Science and Applications journal by Nature publishing group entitled ”Terahertz structured light: nonparaxial Airy imaging using silicon diffractive optics”. The work demonstrates the structured nonparaxial THz light in the form of Airy, Bessel, and Gaussian beams generated in a compact way using exclusively silicon diffractive optics prepared by femtosecond laser ablation technology. The structured THz light consistently outperforms the conventional one in resolution and contrast.

The findings open new frontiers of structured light applications in imaging and inverse scattering problems. Imaging of stacked graphene layers with THz Airy beam revealed potential to be applied for inspection of 2D materials quality.

The article is freely available under Open Access license and can be reached through the DOI address:

International Workshop on Nitride Semiconductors (IWN)

Head of laboratory Dr. Irmantas Kašalynas and PhD student Justinas Jorudas represented THz Photonics laboratory at International Workshop on Nitride Semiconductors (IWN) which took place in Berlin, Germany from 10th till 14th of October. Our lab presented scientific results in 1 oral and 3 poster presentations.

Head of laboratory Dr. Irmantas Kašalynas gives a talk at IWN meeting,

New study on formation and drift of space-charge domains with velocity of sound in n-type GaN

New paper by Roman Balagula et al. under the title ”Space-charge domains in n-type GaN epilayers under pulsed electric field” is published in the Applied Physics Letters.

The experimental work investigates the formation and drift of space-charge domains with velocity of sound in n-type GaN. The findings defines the constraints
for the design of GaN-based power electronic devices.

The paper can be reached through this DOI:

THz Atelier participates at the IRMMW-THz 2022 conference in Delft, the Netherlands

From 28th of August till 2nd of September the THz Photonics laboratory is going to the 47th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)! Our all lab is going to take part in this massive scientific event. This year we discuss very interesting scientific results in 4 oral and 6 poster presentations (10 papers in total). Let’s meet there:

Dissipative Parametric Gain in a GaAs/AlGaAs Superlattice in PHYSICAL REVIEW LETTERS

New study is published in the journal “Physical Review Letters” from American Physical Society in the field of parametric generation of EM oscillations in GHz-THz frequency range. The work reports on the first observation of the dissipative parametric generation in a subcritically doped GaAs/AlGaAs superlattice (SL) subjected to a DC bias and a microwave pump. It enforces excitation of slow electrostatic waves in the SL that provide a significant enhancement of the gain coefficient.

The findings foresee the development of a miniature solid-state parametric generators of GHz-THz frequencies operating at room temperature.

Sketch of the parametric generation in the SL device.

DOI: 10.1103/PhysRevLett.128.236802

High-Frequency and High-Power Performance of n-Type GaN Epilayers with Low Electron Density Grown on Native Substrate

The article by Roman M Balagula et al. just published in the journal MDPI Materials. The study is aimed towards the high frequency response properties of the n-type GaN epilayers on a native stubstrates. The results indicate new practical possibilities of the GaN material controlled by an external electric field for the development of novel devices for high-power and high-frequency applications.

The work was supported by European Social Fund (project No 09.3.3-LMT-K-
712-19-0184) under grant agreement with the Research Council of Lithuania (LMT), the National Science Centre (Grant No. UMO-2017/27/L/ST7/03283) and the National Center for Research and Development (Grant No. WPC/20/DefeGaN/2018 and No. TECHMATSTRATEG-III/0003/2019/EnerGaN).

The article is published as a open access and can be accessed freely via DOI: