European Patent Office (EPO) just published the patent for the method for fabrication of recessed electrical elements (EP 3 975 224) by inventors Irmantas Kašalynas (head of our lab), Simonas Indrašiūnas, Pawel Prystawko, and Piotr Kruszewski. Two later inventors are our collaborators from Institute of High Pressure Physics at Polish
Academy of Sciences, Poland.
Lithuanian patent “Broadband high-frequency generating / amplifying device, using semiconductor superlattices” by Gintaras Valušis, Kirill Alekseev, Vladislovas Čižas, Linas Minkevičius, Natalia Alexxeva, Dalius Seliuta, Liudvikas Subačius.
New principle and at the same time a new type of compact high-frequency radiation source operating at room temperature that can be placed on a semiconductor chip is suggested. It is broadband and can operate in the both GHz and THz frequency bands. Operation of the device relies on principles of the quantum optoelectronics (Esaki-Tsu nonlinearity of the quantum super-lattice), and employ drift-relaxation modes to amplify high-frequency radiation, which propagates in a semiconductor superlattice along its axis at a speed approximately 1000 times slower than the speed of light in a material. It can be realized in semiconductor superlattice with non-ohmic injection contacts of an appropriate design.
