This week the lab staff is visiting Montreal, Canada, for 48th International Conference on Infrared , Millimeter, and Terahertz Waves. It is indeed the main event in the field of terahertz research. This year Terahertz Photonics Laboratory contributed 8 talks in various THz research fields.
Here are the list of presentations and the presenting authors:
Nonparaxial Imaging Using Terahertz Structured Light by Gintaras Valušis et al.
Terahertz And DC Conductivity Of Pyrolyzed Photoresist Films by Justinas Jorudas et al.
This Study Explores The Use Of Passive And Flexible Optics Elements To Achieve THz Beam Profile Engineering For Imaging Applications Via Mechanical Bending by Linas Minkevičius et al.
THz Detection Optimization Of Antenna Coupled AlGaN/GaN High Electron Mobility Transistors by Maxim Moscotin et al.
A Design And Performance Of A Low-cost THz Imaging System Using InP Gunn Diode Emitter, Paraffin Wax Optics And Commercially Available GaAs HEMTs by Linas Minkevičius et al.
Coherent Thermal Emission From Circular N-GaN Surface Relief Gratings 100% by Vytautas Janonis et al.
Two- And Four-step Phase Shifting Methods For Terahertz Holography by Rusnė Ivaskevičiūtė-Povilauskienė et al.
Polarization Selective Dual Frequency Metasurface-based Resonant Thermal Terahertz Emitters On N-GaAs/GaAs by Ignas Grigelionis et al.
The research article by Roman B. Balagula, Liudvikas Subačius, Paweł Prystawko, and Irmantas Kašalynas is published in Journal of Applied Physics, AIP Publishing. The work entitled “Electro-optical modulation of terahertz beam by drifting space-charge domains in n-GaN epilayers” investigates the transmission modulation of THz field in GaN semiconductor as a response to space-charge domains under near-to-breakdown electrical field conditions.
The work was supported by the Research Council of Lithuania through the “Hybrid plasmonic components for THz range (T-HP)” Project (Grant No. DOTSUT-184) funded by the European Regional Development Fund according to the supported activity “Research Projects Implemented by World-class Researcher Groups” under the Measure No. 01.2.2-LMT-K-718-03-0096. The work at Warsaw was supported by the National Center for Research and Development (Grant No. TECHMATSTRATEG-III/0003/2019/EnerGaN).
New work by I. Grigelionis et al. was published in the scientific journal Sensors from MDPI publisher. Authors report on the experimental evidence of thermal terahertz emission tailored by magnetic polariton excitations in entirely GaAs-based structures equipped with metasurfaces. Thermal emission was measured at 390 C temperature in the range from 0.7 THz to 1.3 THz, depending on the size of the square metacells.
The magnetic polariton resonance quality factors obtained at elevated temperatures (Q ~ 3.3 to 5.2) are very similar to those of MIM structures as well as to 2D plasmon resonance quality at cryogenic temperatures.