{"id":85,"date":"2021-04-06T23:03:26","date_gmt":"2021-04-06T23:03:26","guid":{"rendered":"http:\/\/www.thz.lt\/?p=85"},"modified":"2023-02-14T15:15:59","modified_gmt":"2023-02-14T15:15:59","slug":"laser-micromachining-technology-for-algan-gan-hemts-and-schottky-barrier-diodes","status":"publish","type":"post","link":"https:\/\/www.thz.lt\/?p=85","title":{"rendered":"Laser Micromachining Technology for AlGaN\/GaN HEMTs and Schottky barrier diodes"},"content":{"rendered":"<p>Recent study &#8220;Laser Processing of Transparent Wafers with a AlGaN\/GaN Heterostructures and High-Electron Mobility Devices on a Backside&#8221; was published by S. Indra\u0161i\u016bnas <em>et al.<\/em> in &#8220;Micromachines&#8221; Journal from MDPI publisher. In the thorough study laser ablation process was optimized and used to dice transparent wafers with AlGaN\/GaN heterostructures with various electronic devices. The work was supported from the Research Council of Lithuania (Lietuvos mokslo taryba) through the \u201cT-HP\u201d Project (Grant No. DOTSUT-184) funded by the European Regional Development Fund according to the supported activity \u201cResearch Projects Implemented by World-class Researcher Groups\u201d under the Measure No. 01.2.2-LMT-K-718-03-0096. The work can be reached through DOI: <a href=\"https:\/\/www.mdpi.com\/2072-666X\/11\/12\/1131\">https:\/\/doi.org\/10.3390\/mi11121131<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Recent study &#8220;Laser Processing of Transparent Wafers with a AlGaN\/GaN Heterostructures and High-Electron Mobility Devices on a Backside&#8221; was published by S. Indra\u0161i\u016bnas et al. in &#8220;Micromachines&#8221; Journal from MDPI publisher. In the thorough study laser ablation process was optimized and used to dice transparent wafers with AlGaN\/GaN heterostructures with various electronic devices. The work &hellip; <\/p>\n<p class=\"link-more\"><a href=\"https:\/\/www.thz.lt\/?p=85\" class=\"more-link\">Continue reading<span class=\"screen-reader-text\"> &#8220;Laser Micromachining Technology for AlGaN\/GaN HEMTs and Schottky barrier diodes&#8221;<\/span><\/a><\/p>\n","protected":false},"author":3,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[3],"tags":[],"class_list":["post-85","post","type-post","status-publish","format-standard","hentry","category-sci-papers"],"_links":{"self":[{"href":"https:\/\/www.thz.lt\/index.php?rest_route=\/wp\/v2\/posts\/85","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.thz.lt\/index.php?rest_route=\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.thz.lt\/index.php?rest_route=\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.thz.lt\/index.php?rest_route=\/wp\/v2\/users\/3"}],"replies":[{"embeddable":true,"href":"https:\/\/www.thz.lt\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=85"}],"version-history":[{"count":2,"href":"https:\/\/www.thz.lt\/index.php?rest_route=\/wp\/v2\/posts\/85\/revisions"}],"predecessor-version":[{"id":88,"href":"https:\/\/www.thz.lt\/index.php?rest_route=\/wp\/v2\/posts\/85\/revisions\/88"}],"wp:attachment":[{"href":"https:\/\/www.thz.lt\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=85"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.thz.lt\/index.php?rest_route=%2Fwp%2Fv2%2Fcategories&post=85"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.thz.lt\/index.php?rest_route=%2Fwp%2Fv2%2Ftags&post=85"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}